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An Analysis of the Benefits of SiC MOSFET Modules with Integrated Diodes
In a SiC MOSFET module, connecting an independent, high-performance SiC Schottky barrier diode (commonly referred to as a SiC SBD) in parallel with the MOSFET is primarily intended to replace or bypass the body diode inside the MOSFET, thereby addressing several key inherent drawbacks of the SiC body diode.
Recommended 62mm Package SiC MOSFET Driver Solution
For the driver solution targeting 62mm-packaged SiC MOSFET modules, SiC driver circuits are typically either built from scratch or purchased as off-the-shelf driver boards. We analyze mainstream commercially available driver board solutions on the market and propose recommendations for stray inductance requirements suitable for both busbars and stacked busbars.
Analysis of the Differences in Driving Requirements Between SiC MOSFETs and IGBTs
In-depth Analysis and Selection Guide for PI ISO5125I and Vishay FPS08-15K High-Voltage Isolated Power Supply Solutions
Beijing Fuling United Electronics, as a professional agent specializing in IGBT modules and driver solutions, deeply understands the critical importance of a stable, efficient, and isolated power supply for the entire power drive system.
Detailed Explanation of Infineon SiC MOSFET Modules and Driver Solutions
To meet the needs of different voltage levels, Infineon has launched three types of packaged SiC MOSFET products: 62mm package, EconoDUAL3 package, and XHP2 package. These packaged products incorporate the structural design concepts of IGBTs, providing engineers with diverse options.
FST is suitable for parallel drive board with EconoDUAL package
Beijing Fuling United Electronics, as a first-level agent of Fast, is familiar with the pain points of customers' parallel application requirements, actively provides feedback on parallel requirements to Fast, and promotes the application of parallel solutions.